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| www.fairchildsemi.com FSDM311 Features * * * * * * * * * * * * Fairchild Power Switch(FPS) Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a voltage mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It is well suited for cost effective design of flyback converters. 8-DIP Internal Avalanche Rugged SenseFET Precision Fixed Operating Frequency (67KHz) Internal Start-up Switch UVLO with Hysteresis (7V/9V) Over Load Protection Over Voltage Protection Internal Thermal Shutdown Function (Hysteresis) Auto-Restart Mode Secondary Side Regulation Low Operating Current (1.5mA) Built-in Soft Start New 8-DIP Package for Wide Creepage Applications * Charger & Adaptor for Mobile Phone, PDA & MP3 * Auxiliary Power for PC, C-TV & Monitor 1.GND 2.Vcc 3.Vfb 4.NC 5.Vstr 6.7.8.Drain Internal Block Diagram Vstr Vcc 2 UVLO Voltage Ref. Internal Bias UVLO > 9V Vck OSC 5uA 400uA PWM S Q R DRIVER SFET UVLO < 7V 5 Drain 6, 7, 8 Vfb 3 uA S/S 10mS NC 4 Reset 4.5V LEB OCP OLP OVP S R TSD His 60 Vth Q Rsense Min.20V /4 1 GND Rev.1.0.0 (c)2003 Fairchild Semiconductor Corporation FSDM311 Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Characteristic FSDM311 Maximum Vstr Voltage Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (1) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. VSTR,MAX VDGR VGS IDM EAS VCC,MAX VFB PD Derating TJ TA TSTG 650 - - - - 20 -0.3 to VSD - - +150 -25 to +85 -55 to +150 V V V ADC mJ V V W W/C C C C Symbol Value Unit Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=24mH, starting Tj=25C 2 FSDM311 Electrical Characteristics (SenseFET Part) (Ta = 25C unless otherwise specified) Parameter FSDM310, FSDM311 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test: Pulse width 300S, duty 2% 2. 1 S = --R (Note) Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=50A VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) Min. 650 - Typ. 15 - Max. 100 19 - Unit V A A S pF nS nC 3 FSDM311 Electrical Characteristics (Control Part) (Continued) (Ta=25C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Frequency Change With Temperature Maximum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current REFERENCE SECTION Output Voltage (1) Temperature Stability Peak Current Limit SOFT START SECTION Soft Start Time PROTECTION SECTION Thermal Shutdown Temperature (1) Thermal Shutdown Hysteresis Over Voltage Protection TOTAL STANDBY CURRENT SECTION Start-up Current Operating Supply Current (Control Part Only) ISTR IOP VCC=0V, VSTR=50V VCC 16 450 550 1.5 650 3.0 A mA VOVP TSD 125 20 145 60 C C V TSOFT 10 15 mS (1)(2) (2) Symbol VSTART VSTOP FOSC F/T Dmax IFB VSD Idelay Vref Vref/T IOVER Condition VFB=GND VFB=GND Min. 8 6 61 Typ. 9 7 67 5 67 0.40 4.5 5 4.50 0.3 0.55 Max. 10 8 73 10 0.45 5.0 4.70 0.6 0.60 Unit V V kHz % % mA V A V mV/C A -25C Ta +85C - Ta=25C, 0V Vfb 3V Ta=25C, 3V Vfb VSD Ta=25C -25C Ta +85C 0.35 4.0 4.30 0.50 CURRENT LIMIT(SELF-PROTECTION)SECTION Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 FSDM311 Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25C) 1.15 1.15 1.10 1.10 1.05 1.05 Vref 0.95 Iop -50 0 50 100 150 1.00 1.00 0.95 0.90 0.90 0.85 0.85 -50 0 50 100 150 Temperature('C) Temperature('C) Figure 1. Reference Voltage vs. Temp Figure 2. Operating Current vs. Temp 1.15 1.15 1.10 1.10 1.05 1.05 Vstart Vstop 1.00 1.00 0.95 0.95 0.90 0.90 0.85 -50 0 50 100 150 0.85 -50 0 50 100 150 Temperature('C) Temperature('C) Figure 3. Start Threshold Voltage vs. Temp Figure 4. Stop Threshold Voltage vs. Temp 1.15 1.15 1.10 1.10 1.05 1.05 1.00 Dmax -50 0 50 100 150 Fosc 1.00 0.95 0.95 0.90 0.90 0.85 0.85 -50 0 50 100 150 Temperature('C) Temperature('C) Figure 5. Freqency vs. Temp Figure 6. Maximum Duty vs. Temp 5 FSDM311 Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25C) 1.15 1.15 1.10 1.10 1.05 1.05 Iover 0.95 Ifb -50 0 50 100 150 1.00 1.00 0.95 0.90 0.90 0.85 0.85 -50 0 50 100 150 Temperature('C) Temperature('C) Figure 7. Peak Current Limit vs. Temp Figure 8. Feedback Source Current vs. Temp 1.15 1.15 1.10 1.10 1.05 1.05 Idelay Vsd 1.00 1.00 0.95 0.95 0.90 0.90 0.85 -50 0 50 100 150 0.85 -50 0 50 100 150 Temperature('C) Temperature('C) Figure 9. ShutDown Delay Current vs. Temp Figure 10. ShutDown Feedback Voltage vs. Temp 1.15 1.10 1.05 Vovp 1.00 0.95 0.90 0.85 -50 0 50 100 150 Temperature('C) Figure 11. Over Voltage Protection vs. Temp 6 FSDM311 Package Dimensions 8-DIP 7 FSDM311 Ordering Information Product Number FSDM311 Package 8-DIP Marking Code DM311 BVDSS 650V FOSC 67kHz RDS(on) 15 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 8/28/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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